Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process.
Identifieur interne : 001402 ( Main/Exploration ); précédent : 001401; suivant : 001403Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process.
Auteurs : RBID : pubmed:21436506English descriptors
- KwdEn :
- Alkenes (chemistry), Copper (chemistry), Electronics, Hot Temperature, Indium (chemistry), Light, Models, Chemical, Nanotechnology (methods), Nitrogen (chemistry), Oleic Acid (chemistry), Optics and Photonics, Quantum Dots, Selenium (chemistry), Solvents (chemistry), Spectrophotometry, Ultraviolet (methods), Temperature, X-Ray Diffraction.
- MESH :
- chemical , chemistry : Alkenes, Copper, Indium, Nitrogen, Oleic Acid, Selenium, Solvents.
- methods : Nanotechnology, Spectrophotometry, Ultraviolet.
- Electronics, Hot Temperature, Light, Models, Chemical, Optics and Photonics, Quantum Dots, Temperature, X-Ray Diffraction.
Abstract
CuInSe(2) (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)(3) with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm-2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)(2) in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ∼ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer-Emmett-Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m(2) g(-1), which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m(2) g(-1)) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices.
DOI: 10.1088/0957-4484/22/19/195607
PubMed: 21436506
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process.</title><author><name sortKey="Zhou, Wenwen" uniqKey="Zhou W">Wenwen Zhou</name><affiliation wicri:level="1"><nlm:affiliation>School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.</nlm:affiliation><country xml:lang="fr">Singapour</country><wicri:regionArea>School of Materials Science and Engineering, Nanyang Technological University, Singapore</wicri:regionArea></affiliation></author><author><name sortKey="Yin, Zongyou" uniqKey="Yin Z">Zongyou Yin</name></author><author><name sortKey="Sim, Dao Hao" uniqKey="Sim D">Dao Hao Sim</name></author><author><name sortKey="Zhang, Hua" uniqKey="Zhang H">Hua Zhang</name></author><author><name sortKey="Ma, Jan" uniqKey="Ma J">Jan Ma</name></author><author><name sortKey="Hng, Huey Hoon" uniqKey="Hng H">Huey Hoon Hng</name></author><author><name sortKey="Yan, Qingyu" uniqKey="Yan Q">Qingyu Yan</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="doi">10.1088/0957-4484/22/19/195607</idno><idno type="RBID">pubmed:21436506</idno><idno type="pmid">21436506</idno><idno type="wicri:Area/Main/Corpus">001482</idno><idno type="wicri:Area/Main/Curation">001482</idno><idno type="wicri:Area/Main/Exploration">001402</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alkenes (chemistry)</term><term>Copper (chemistry)</term><term>Electronics</term><term>Hot Temperature</term><term>Indium (chemistry)</term><term>Light</term><term>Models, Chemical</term><term>Nanotechnology (methods)</term><term>Nitrogen (chemistry)</term><term>Oleic Acid (chemistry)</term><term>Optics and Photonics</term><term>Quantum Dots</term><term>Selenium (chemistry)</term><term>Solvents (chemistry)</term><term>Spectrophotometry, Ultraviolet (methods)</term><term>Temperature</term><term>X-Ray Diffraction</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Alkenes</term><term>Copper</term><term>Indium</term><term>Nitrogen</term><term>Oleic Acid</term><term>Selenium</term><term>Solvents</term></keywords><keywords scheme="MESH" qualifier="methods" xml:lang="en"><term>Nanotechnology</term><term>Spectrophotometry, Ultraviolet</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Electronics</term><term>Hot Temperature</term><term>Light</term><term>Models, Chemical</term><term>Optics and Photonics</term><term>Quantum Dots</term><term>Temperature</term><term>X-Ray Diffraction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuInSe(2) (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)(3) with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm-2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)(2) in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ∼ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer-Emmett-Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m(2) g(-1), which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m(2) g(-1)) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">21436506</PMID><DateCreated><Year>2011</Year><Month>03</Month><Day>25</Day></DateCreated><DateCompleted><Year>2011</Year><Month>07</Month><Day>15</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>22</Volume><Issue>19</Issue><PubDate><Year>2011</Year><Month>May</Month><Day>13</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process.</ArticleTitle><Pagination><MedlinePgn>195607</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/22/19/195607</ELocationID><Abstract><AbstractText>CuInSe(2) (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)(3) with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm-2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)(2) in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ∼ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer-Emmett-Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m(2) g(-1), which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m(2) g(-1)) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Zhou</LastName><ForeName>Wenwen</ForeName><Initials>W</Initials><Affiliation>School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.</Affiliation></Author><Author ValidYN="Y"><LastName>Yin</LastName><ForeName>Zongyou</ForeName><Initials>Z</Initials></Author><Author ValidYN="Y"><LastName>Sim</LastName><ForeName>Dao Hao</ForeName><Initials>DH</Initials></Author><Author ValidYN="Y"><LastName>Zhang</LastName><ForeName>Hua</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Ma</LastName><ForeName>Jan</ForeName><Initials>J</Initials></Author><Author ValidYN="Y"><LastName>Hng</LastName><ForeName>Huey Hoon</ForeName><Initials>HH</Initials></Author><Author ValidYN="Y"><LastName>Yan</LastName><ForeName>Qingyu</ForeName><Initials>Q</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>03</Month><Day>24</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Alkenes</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Solvents</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>2UMI9U37CP</RegistryNumber><NameOfSubstance>Oleic Acid</NameOfSubstance></Chemical><Chemical><RegistryNumber>789U1901C5</RegistryNumber><NameOfSubstance>Copper</NameOfSubstance></Chemical><Chemical><RegistryNumber>H5ZUQ6V4AK</RegistryNumber><NameOfSubstance>1-octadecene</NameOfSubstance></Chemical><Chemical><RegistryNumber>H6241UJ22B</RegistryNumber><NameOfSubstance>Selenium</NameOfSubstance></Chemical><Chemical><RegistryNumber>N762921K75</RegistryNumber><NameOfSubstance>Nitrogen</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Alkenes</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Copper</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Electronics</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Hot 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Dots</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Selenium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Solvents</DescriptorName><QualifierName MajorTopicYN="N">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Spectrophotometry, Ultraviolet</DescriptorName><QualifierName MajorTopicYN="N">methods</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Temperature</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">X-Ray Diffraction</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>3</Month><Day>24</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>3</Month><Day>26</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>3</Month><Day>26</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>7</Month><Day>16</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0957-4484(11)76412-1</ArticleId><ArticleId IdType="doi">10.1088/0957-4484/22/19/195607</ArticleId><ArticleId IdType="pubmed">21436506</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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